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FDFMA2P859T - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Key Features

  • MOSFET:.
  • Max rDS(on) = 120 m: at VGS =.
  • 4.5 V, ID =.
  • 3.0 A.
  • Max rDS(on) = 160 m: at VGS =.
  • 2.5 V, ID =.
  • 2.5 A.
  • Max rDS(on) = 240 m: at VGS =.
  • 1.8 V, ID =.
  • 1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.0 A, 120 m: Features MOSFET: „ Max rDS(on) = 120 m: at VGS = –4.5 V, ID = –3.0 A „ Max rDS(on) = 160 m: at VGS = –2.5 V, ID = –2.5 A „ Max rDS(on) = 240 m: at VGS = –1.8 V, ID = –1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.