• Part: FDFME3N311ZT
  • Description: N-Channel MOSFET and Schottky Diode
  • Manufacturer: Fairchild Semiconductor
  • Size: 285.81 KB
Download FDFME3N311ZT Datasheet PDF
FDFME3N311ZT page 2
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FDFME3N311ZT Key Features

  • Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
  • Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
  • Low profile: 0.55 mm maximum in the new package
  • Free from halogenated pounds and antimony oxides
  • HBM ESD protection level > 1600 V (Note 3)
  • RoHS pliant