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FDFMA2P853 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Features

  • a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear mode.

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FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P853 July 2014 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear mode applications. Features MOSFET: „ -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V RDS(ON) = 160 m: @ VGS = -2.5 V RDS(ON) = 240 m: @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 mA „ Low Profile - 0.
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