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MOSFET – P-Channel, POWERTRENCH) Integrated with Schottky Diode
-20 V, -3.1 A, 95 mW
FDFMA2P029Z, FDFMA2P029Z-F106
General Description This device is designed specifically as a single package solution for
the battery charge switch in cellular handset and other ultra−portable applications. It features a MOSFET with very low on−state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features MOSFET
• Max rDS(on) = 95 mW at VGS = –4.5 V, ID = –3.1 A • Max rDS(on) = 141 mW at VGS = –2.5 V, ID = –2.5 A • HBM ESD Protection Level > 2.5 kV (Note 1)
Schottky
• VF < 0.37 V @ 500 mA • Low Profile − 0.
FDFMA2P029Z Datasheet
