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FDFMJ2P023Z - MOSFET And Schottky Diode

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Key Features

  • MOSFET General.

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FDFMJ2P023Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2007 FDFMJ2P023Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode www.datasheet4u.com tm –20V, –2.9A, 112mΩ Features MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The SC-75 MicroFET package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. „ Max rDS(on) = 112mΩ at VGS = –4.5V, ID = –2.9A „ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.