Click to expand full text
Final Datasheet
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2014
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30V, 4A, 56mΩ
Features
Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
VF < 0.45V @ 2A VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
General Description
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.