FDFS6N754 Datasheet | Fairchild Semiconductor

Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2014 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 4A, 56mΩ Features - Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A - VF < 0.45V @ 2A VF < 0.28V @ 100mA - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility - Low Gate Charge (Qg = 4nC) - Low Miller Charge General Description The FDFS6N754 bines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier...