FDFS6N754 diode equivalent, n-channel mosfet and schottky diode.
* Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
* VF < 0.45V @ 2A VF < 0.28V @ 100mA
* Schottky and MOSFET incorporated .
* DC/DC converters
D D
C C
A1 A2
8C 7C
SO-8
Pin 1
G S
A A
S3 G4
MOSFET Maximum Ratings TA = 25°C unless othe.
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.
This device is designed specifically as a single package solution for D.
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