Datasheet Details
| Part number | FDG410NZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 295.61 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDG410NZ_FairchildSemiconductor.pdf |
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Overview: FDG410NZ Single N-Channel PowerTrench® MOSFET FDG410NZ Single N-Channel PowerTrench® MOSFET 20 V, 2.
| Part number | FDG410NZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 295.61 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDG410NZ_FairchildSemiconductor.pdf |
|
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Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Fast switching speed This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package.
Applications DC/DC converter Power management Load switch Low gate charge RoHS pliant DS D G D D D1 D2 G3 6D 5D 4S SC70-6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 2.2 6.0 0.42 0.38 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking .41 Device FDG410NZ Package SC70-6 (Note 1a) 300 (Note 1b) 333 °C/W Reel Size 7” Tape Width 8 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation 1 FDG410NZ Rev.B .fairchildsemi.
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