FDI150N10 datasheet, mosfet equivalent, Fairchild Semiconductor

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FDI150N10 Features and benefits

* RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on) <.

FDI150N10 Application

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.

FDI150N10 Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification .

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