FDI150N10 N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDI150N10 Description

FDI150N10 * N-Channel PowerTrench® MOSFET FDI150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 16 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDI150N10 Features

* RDS(on) = 12 mΩ (Typ. ) @ VGS = 10 V, ID = 49 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDI150N10 Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micor Solar Inverter D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EA

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FDI150N10 Datasheet Preview — Preview of FDI150N10 PDF

Datasheet Details

Part number: FDI150N10
Manufacturer: Fairchild Semiconductor
File Size: 534.63 KB
Datasheet: FDI150N10-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

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📌 All Tags

N-Channel PowerTrench MOSFET Fairchild Semiconductor

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