FDMA3028N Datasheet | Fairchild Semiconductor

FDMA3028N Dual N-Channel Power Trench® MOSFET June 2011 Dual N-Channel Power Trench® MOSFET 30 V, 3.8 A, 68 mΩ Features General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It Features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. - Max r DS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A - Max r DS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A - Max r DS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Ro HS pliant PIN 1 S1 G1 D2 S1 1 D1 D2 G1 2 5 6 D1 G2 D1 Top Micro FET 2x2 G2 S2 Bottom D2 3 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 30 ±12 3.8 16 1.5 0.7 -55 to +150 Units V V A W °C Thermal Characteristics Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient RθJA Thermal Resistance for Dual Operation, Junction to Ambient Thermal Resistance for Dual Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Dual Operation, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) (Note 1e) (Note 1f) 86 173 69 151 160 133 °C/W Package Marking and Ordering Information Device Marking 328 Device FDMA3028N Package Micro FET 2X2 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units .fairchildsemi....