Datasheet Details
| Part number | FDMC6688P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 351.69 KB |
| Description | MOSFET |
| Download | FDMC6688P Download (PDF) |
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| Part number | FDMC6688P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 351.69 KB |
| Description | MOSFET |
| Download | FDMC6688P Download (PDF) |
|
|
|
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications Load Switch Battery Management Power Management Reverse Polarity Protection Pin 1 Pin 1 SS SG S S D D DDDD SD GD Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pu
FDMC6688P P-Channel PowerTrench® MOSFET February 2015 FDMC6688P P-Channel PowerTrench® MOSFET -20 V, -56 A, 6.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| FDMC6688P | P-Channel MOSFET | ON Semiconductor |
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