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FDMC6688P Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

„ Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A „ Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A „ Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

Applications „ Load Switch „ Battery Management „ Power Management „ Reverse Polarity Protection Pin 1 Pin 1 SS SG S S D D DDDD SD GD Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pu

Overview

FDMC6688P P-Channel PowerTrench® MOSFET February 2015 FDMC6688P P-Channel PowerTrench® MOSFET -20 V, -56 A, 6.

Key Features

  • General.