FDMC86106LZ Key Features
- Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- DC Conversion
- Part: FDMC86106LZ
- Description: N-Channel Power Trench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 350.07 KB
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