Datasheet Details
| Part number | FDMC86106LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 350.07 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC86106LZ Download (PDF) |
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Overview: FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 FDMC86106LZ N-Channel Power Trench® MOSFET 100 V, 7.
| Part number | FDMC86106LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 350.07 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC86106LZ Download (PDF) |
|
|
|
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application DC - DC Conversion Top Pin 1 S S S G Bottom 5 6 7 8 D D D D D 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 7.5 9.6 3.3 15 12 19 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.5 53 °C/W Package Marking and Ordering Information Device Marking FDMC86106Z Device FDMC86106LZ Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FDMC86106LZ N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to S
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