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FDMD8280 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

„ Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A „ Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A „ Ideal for flexible layout in primary side of bridge topology „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested „ Kelvin High Side MOSFET drive pin-out capability This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package.

HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Applications „ Synchronous Buck : Primary Switch of Half / Full bridge converter for telecom „ Motor Bridge : Primary Switch of Half / Full bridge converter for BLDC motor „ MV POL : 48V Synchronous Buck Switch Pin 1 Power 3.3 x 5 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate t

Overview

FDMD8280 Dual N-Channel PowerTrench® MOSFET October 2014 FDMD8280 Dual N-Channel Power Trench® MOSFET 80 V, 40 A, 8.

Key Features

  • General.