Datasheet Details
| Part number | FDMD84100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 230.50 KB |
| Description | MOSFET |
| Download | FDMD84100 Download (PDF) |
|
|
| Part number | FDMD84100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 230.50 KB |
| Description | MOSFET |
| Download | FDMD84100 Download (PDF) |
|
|
|
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in secondary side synchronous rectification This package integrates two N-Channel devices connected internally in common-source configuration.
This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.
Provides a very small footprint (3.3 x 5 mm) for higher power density.
FDMD84100 Dual N-Channel PowerTrench® MOSFET June 2016 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20.
| Part Number | Description |
|---|---|
| FDMD82100 | MOSFET |
| FDMD82100L | MOSFET |
| FDMD8280 | MOSFET |
| FDMD85100 | MOSFET |
| FDMD86100 | MOSFET |
| FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDM3300NZ | N-Channel MOSFET |
| FDM3622 | N-Channel PowerTrench MOSFET |
| FDM606P | P-Channel 1.8V Logic Level Power Trench MOSFET |
| FDM6296 | Single N-Channel / Logic-Level / PowerTrench MOSFET |