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FDMS2572 - N-Channel UltraFET Trench MOSFET

General Description

Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A Low Miller Charge Optimized efficiency at high frequencies UIS Capability (Single pulse and Repetitive pulse) RoHS Compliant UItraFET devices combine cha

Key Features

  • General.

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FDMS2572 N-Channel UltraFET Trench® MOSFET December 2012 FDMS2572 N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ Features General Description „ Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A „ Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A „ Low Miller Charge „ Optimized efficiency at high frequencies „ UIS Capability (Single pulse and Repetitive pulse) „ RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.