FDMS2572 mosfet equivalent, n-channel ultrafet trench mosfet.
General Description
* Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A
* Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A
* Low Miller Charge
* Optimized efficiency .
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.
* Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A
* Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A
* Low Miller Charge
* Optimized efficiency at high frequencies
* UIS Capability (Single pulse and Repetitive pulse)
* RoHS Compliant
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