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FDMS3008SDC - N-Channel MOSFET

Description

Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This N

Features

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Full PDF Text Transcription

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FDMS3008SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM July 2015 FDMS3008SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM 30 V, 65 A, 2.6 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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