General Description
* Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
* Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
* Advanced Package and Silicon design f.

* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant This N-Channel MOSFET has been designed spe.

* Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
* Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
* Advanced Package and Silicon design for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered f.

FDMS7670

FDMS7670AS

FDMS7672

FDMS7672AS

FDMS7678

FDMS7600AS

FDMS7602S

FDMS7606

FDMS7608S

FDMS7620S

FDMS7650

FDMS7650DC

FDMS7656AS