Datasheet Details
| Part number | FDMS7678 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 296.33 KB |
| Description | MOSFET |
| Datasheet |
 FDMS7678 Datasheet
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| Part number | FDMS7678 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 296.33 KB |
| Description | MOSFET |
| Datasheet |
FDMS7678 Datasheet
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|
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Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A High Performance Technology for Extremely Low rDS(on) Termination is Lead-Free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications DC - DC Buck Converters Notebook Battery Power Management Load Switch in Notebook Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
FDMS7678 N-Channel Power Trench® MOSFET March 2015 FDMS7678 N-Channel Power Trench® MOSFET 30 V, 26 A, 5.
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