Datasheet4U Logo Datasheet4U.com

FDMS8026S - MOSFET

Description

Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Advanced package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL teste

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMS8026S

Datasheet Details

Part number FDMS8026S
Manufacturer Fairchild Semiconductor
File Size 315.77 KB
Description MOSFET
Datasheet download datasheet FDMS8026S Datasheet
Additional preview pages of the FDMS8026S datasheet.

📁 Similar Datasheet

  • FDMS8320L - N-Channel MOSFET (ON Semiconductor)
  • FDMS8320LDC - N-Channel MOSFET (ON Semiconductor)
  • FDMS8460 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86101 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86101DC - N-Channel MOSFET (ON Semiconductor)
  • FDMS86163P - P-Channel MOSFET (ON Semiconductor)
  • FDMS86181 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86200 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86200DC - N-Channel MOSFET (ON Semiconductor)
  • FDMS86255 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS8026S N-Channel PowerTrench® SyncFETTM FDMS8026S N-Channel PowerTrench® SyncFETTM 30 V, 22 A, 4.3 mΩ October 2014 Features General Description „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A „ Advanced package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Published: |