FDMS8333L Datasheet, Fairchild Semiconductor

* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
* Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
* Advanced Package and Silicon combination for low rDS(on) an.

* OringFET / Load Switching
* Synchronous rectification
* DC-DC Conversion Pin 1 Top Bottom Pin 1 S S S.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.