FDMS8350L Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted...
FDMS8350L Key Features
- Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
- Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant