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FDMS8350L - MOSFET

Download the FDMS8350L datasheet PDF. This datasheet also covers the FDMS8050L variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Primary DC-DC MOSFET Secondary Synchronous Rectifier

Key Features

  • Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A.
  • Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMS8050L-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMS8320L MOSFET
FDMS8320LDC N-Channel Dual Cool Power Trench MOSFET
FDMS8333L MOSFET
FDMS8018 MOSFET
FDMS8020 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS8350L N-Channel PowerTrench® MOSFET March 2015 FDMS8350L N-Channel PowerTrench® MOSFET 40 V, 290 A, 0.85 mΩ Features „ Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A „ Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.