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FDMS8350L - MOSFET

This page provides the datasheet information for the FDMS8350L, a member of the FDMS8050L MOSFET family.

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Primary DC-DC MOSFET Secondary Synchronous Rectifier

Features

  • Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A.
  • Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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Datasheet preview – FDMS8350L

Datasheet Details

Part number FDMS8350L
Manufacturer Fairchild Semiconductor
File Size 218.30 KB
Description MOSFET
Datasheet download datasheet FDMS8350L Datasheet
Additional preview pages of the FDMS8350L datasheet.

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Full PDF Text Transcription

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FDMS8350L N-Channel PowerTrench® MOSFET March 2015 FDMS8350L N-Channel PowerTrench® MOSFET 40 V, 290 A, 0.85 mΩ Features „ Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A „ Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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