FDMS8350L Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A - Max r DS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - MSL1 robust package design - 100% UIL tested - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications - Primary DC-DC MOSFET - Secondary Synchronous Rectifier - Load Switch Top Pin 1 Bottom S Pin 1 S S G Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C...