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FDMS8333L N-Channel PowerTrench® MOSFET
December 2014
FDMS8333L
N-Channel PowerTrench® MOSFET
40 V, 76 A, 3.1 mΩ
Features
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMS8333L Datasheet
