FDMS8333L Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications OringFET / Load Switching Synchronous rectification DC-DC...
FDMS8333L Key Features
- Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
- Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant