FDMS8333L
FDMS8333L is MOSFET manufactured by Fairchild Semiconductor.
Features
- Max r DS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
- Max r DS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance.
Applications
- Oring FET / Load Switching
- Synchronous rectification
- DC-DC Conversion
Pin 1
Top
Bottom
Pin 1
Power 56
MOSFET Maximum Ratings...
