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FDMS8672S Key Features

  • Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A
  • Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A
  • Advanced Package and Silicon bination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • MSL1 robust package design
  • RoHS pliant
  • Synchronous Rectifier for DC/DC Converters
  • Notebook Vcore/ GPU low side switch
  • Networking Point of Load low side switch
  • Tele secondary side rectification

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FDMS8672S Description

„ Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Advanced Package and Silicon bination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS pliant tm The FDMS8672S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest...