FDMS8880 Key Features
- Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 13.0 m: at VGS = 4.5 V, ID = 10.9 A
- Advanced Package and Silicon bination
- MSL1 robust package design
- RoHS pliant
| Part Number | Description |
|---|---|
| FDMS8888 | N-Channel MOSFET |
| FDMS8820 | N-Channel PowerTrench MOSFET |
| FDMS8018 | MOSFET |
| FDMS8020 | MOSFET |
| FDMS8023S | MOSFET |