FDMS8820 Datasheet | Fairchild Semiconductor

FDMS8820 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30 V, 160 A, 2.0 mΩ Features - Max r DS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A - Max r DS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - MSL1 robust package design - 100% UIL tested - Ro HS pliant May 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Applications - VRM Vcore Switching For Desktop And Server - Oring FET / Load Switching - DC-DC Conversion Pin 1 Top Bottom Pin 1 Power 56 D D DD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source...