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FDMS8820 - N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod

Features

  • Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant May 2015 General.

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Datasheet preview – FDMS8820

Datasheet Details

Part number FDMS8820
Manufacturer Fairchild Semiconductor
File Size 276.14 KB
Description N-Channel PowerTrench MOSFET
Datasheet download datasheet FDMS8820 Datasheet
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Full PDF Text Transcription

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FDMS8820 N-Channel PowerTrench® MOSFET FDMS8820 N-Channel PowerTrench® MOSFET 30 V, 160 A, 2.0 mΩ Features „ Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant May 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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