Datasheet4U Logo Datasheet4U.com

FDMS8880 - MOSFET

Datasheet Summary

Description

October 2014 Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.5 A Max rDS(on) = 13.0 m: at VGS = 4.5 V, ID = 10.9 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant The FDMS8880 has

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMS8880

Datasheet Details

Part number FDMS8880
Manufacturer Fairchild Semiconductor
File Size 304.06 KB
Description MOSFET
Datasheet download datasheet FDMS8880 Datasheet
Additional preview pages of the FDMS8880 datasheet.

📁 Similar Datasheet

  • FDMS8320L - N-Channel MOSFET (ON Semiconductor)
  • FDMS8320LDC - N-Channel MOSFET (ON Semiconductor)
  • FDMS8460 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86101 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86101DC - N-Channel MOSFET (ON Semiconductor)
  • FDMS86163P - P-Channel MOSFET (ON Semiconductor)
  • FDMS86181 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86200 - N-Channel MOSFET (ON Semiconductor)
  • FDMS86200DC - N-Channel MOSFET (ON Semiconductor)
  • FDMS86255 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS8880 N-Channel PowerTrench® MOSFET FDMS8880 N-Channel PowerTrench® MOSFET 30 V, 21 A, 8.5 m: Features General Description October 2014 „ Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 13.0 m: at VGS = 4.5 V, ID = 10.9 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ RoHS Compliant The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Published: |