FDMS8880 Datasheet | Fairchild Semiconductor

FDMS8880 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30 V, 21 A, 8.5 m: Features General Description October 2014 - Max r DS(on) = 8.5 m: at VGS = 10 V, ID = 13.5 A - Max r DS(on) = 13.0 m: at VGS = 4.5 V, ID = 10.9 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - MSL1 robust package design - Ro HS pliant The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. Applications - Synchronous Buck for Notebook Vcore and Server - Notebook Battery Pack - Load Switch Top Bottom Pin 1 Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous...