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FDMS8888 N-Channel PowerTrench® MOSFET
June 2015
FDMS8888
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N-Channel PowerTrench® MOSFET
30 V, 21 A, 9.5 m:
Features
General Description
Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A Advanced Package and Silicon combination
for low rDS(on) and high efficiency
The FDMS8888 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
FDMS8888 Datasheet
