FDMS8888 Datasheet | Fairchild Semiconductor

FDMS8888 N-Channel Power Trench® MOSFET June 2015 NNNN N-Channel Power Trench® MOSFET 30 V, 21 A, 9.5 m: Features General Description - Max r DS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A - Max r DS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency The FDMS8888 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. - MSL1 robust package design - Ro HS pliant Applications - Synchronous Buck for Notebook Vcore and Server - Notebook Battery Pack - Load Switch Top Bottom Pin 1 S Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Drain to Source Voltage Parameter Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche...