Datasheet Details
| Part number | FDMT80060DC |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 416.82 KB |
| Description | MOSFET |
| Datasheet |
 FDMT80060DC Datasheet
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| Part number | FDMT80060DC |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 416.82 KB |
| Description | MOSFET |
| Datasheet |
FDMT80060DC Datasheet
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Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications MSL1 robust package design OringFET / Load Switching 100% UIL tested Synchronous Rectification RoHS Compliant DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual CoolTM 88 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET August 2015 FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 60 V, 292 A, 1.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMT80060DC | N-Channel Power MOSFET | ON Semiconductor |
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