FDMT80060DC
Features
General Description
- Max r DS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
- Max r DS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool TM package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications
- MSL1 robust package design
- Oring FET / Load Switching
- 100% UIL tested
- Synchronous Rectification
- Ro HS pliant
- DC-DC Conversion
Pin 1
Pin 1
S SS
Top
Dual Cool TM 88
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
Drain to Source Voltage Gate to Source Voltage Drain Current...
