FDMT80060DC Description
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and Silicon bination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual...
FDMT80060DC Key Features
- Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
- Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package