Datasheet Summary
FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
August 2015
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
60 V, 292 A, 1.1 mΩ
Features
General Description
- Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
- Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining...
