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FDMT80060DC - MOSFET

General Description

Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low

Overview

FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET August 2015 FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 60 V, 292 A, 1.

Key Features

  • General.