FDMT80080DC Datasheet | Fairchild Semiconductor

FDMT80080DC N-Channel Dual Cool TM 88 Power Trench® MOSFET July 2015 N-Channel Dual Cool TM 88 Power Trench® MOSFET 80 V, 254 A, 1.35 mΩ Features - Max r DS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A - Max r DS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - Low profile 8x8mm MLP package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool TM package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications - MSL1 robust package design - Oring FET / Load Switching - 100% UIL tested - Synchronous Rectification - Ro HS pliant - DC-DC Conversion Pin 1 Pin 1 S SS Top Dual Cool TM 88 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source...