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FDN352AP Datasheet P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.

Applications ■ Notebook computer power management D D www.DataSheet4U.com S G G S SuperSOT™-3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings –30 ±25 –1.3 –10 0.5 0.46 –55 to +150 Units V V A W °C °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 Package Marking and Ordering Information Device Marking 52AP Device FDN352AP Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDN352AP Rev.

Overview

FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench®.

Key Features

  • 1.3 A,.
  • 30V.
  • 1.1 A,.
  • 30V RDS(ON) = 180 mΩ @ VGS =.
  • 10V RDS(ON) = 300 mΩ @ VGS =.
  • 4.5V.
  • High performance trench technology for extremely low RDS(ON).
  • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. General.

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