FDN359AN mosfet equivalent, n-channel mosfet.
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard S.
where low in-line power loss and fast switching are required.
Features
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(.
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suite.
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