Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Single, P-Channel, POWERTRENCH) FDN352AP
VDSS
- 30 V
RDS(ON) MAX 180 mW @
- 10 V 300 mW @
- 4.5 V
ID MAX
- 1.3 A
- 1.1 A
General Description This P- Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss is needed in a very small outline surface mount package.
Features
- - 1.3 A,
- 30 V RDS(ON) = 180 mW @ VGS =
- 10 V
- - 1.1 A,
- 30 V RDS(ON) = 300 mW @ VGS =
- 4.5 V
- High Performance Trench...
