FDN359AN - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN359AN
Manufacturer	ON Semiconductor
File Size	283.14 KB
Description	N-Channel MOSFET
Datasheet	FDN359AN Datasheet
Additional preview pages of the FDN359AN datasheet.

Product details

Description

This N Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance. line power loss and fast switching are required.

Features

2.7 A, 30 V.
RDS(ON) = 0.046 W @ VGS = 10 V.
RDS(ON) = 0.060 W @ VGS = 4.5 V.
Very Fast Switching.
Low Gate Charge (5 nC Typical).
High Power Version of Industry Standard SOT.
23 Package. Identical Pin out to SOT.
23 with 30% Higher Power Handling Capability.

📁 Similar Datasheet

FDN352AP - PowerTrench MOSFET (Fairchild Semiconductor)
FDN357N - N-Channel MOSFET (Fairchild Semiconductor)
FDN358P - P-Channel MOSFET (Fairchild Semiconductor)
FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN306P - P-Channel MOSFET (Fairchild Semiconductor)
FDN308P - P-Channel MOSFET (Fairchild Semiconductor)
FDN327N - N-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDN359BN - N-Channel MOSFET
FDN304PZ - P-Channel MOSFET
FDN335N - N-Channel MOSFET
FDN336P - P-Channel MOSFET
FDN337N - N-Channel MOSFET
FDN338P - P-Channel MOSFET

Published: Dec 25, 2023 |