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MOSFET – N-Channel, POWERTRENCH), Logic Level
FDN359AN
General Description This N−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
Features
• 2.7 A, 30 V
♦ RDS(ON) = 0.046 W @ VGS = 10 V ♦ RDS(ON) = 0.060 W @ VGS = 4.5 V
• Very Fast Switching • Low Gate Charge (5 nC Typical) • High Power Version of Industry Standard SOT−23 Package.
FDN359AN Datasheet
