FDP10AN06A0 - N-Channel MOSFET

Features

r DS(ON) = 9.5mΩ (Typ. ), V GS = 10V, ID = 75A.
Qg(tot) = 28nC (Typ. ), VGS = 10V.
Low Miller Charge.
Low Qrr Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).
Qualified to AEC Q101 Formerly developmental type 82560.

Fairchild Semiconductor

Datasheet Details

Part number	FDP10AN06A0
Manufacturer	Fairchild Semiconductor
File Size	265.23 KB
Description	N-Channel MOSFET
Datasheet	FDP10AN06A0 Datasheet
Additional preview pages of the FDP10AN06A0 datasheet.

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Full PDF Text Transcription

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FDB10AN06A0 / FDP10AN06A0 July 2002 FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ Features • r DS(ON) = 9.5mΩ (Typ.), V GS = 10V, ID = 75A • Qg(tot) = 28nC (Typ.

Published: Mar 30, 2005 |