FDP14AN06LA0 Datasheet | Fairchild Semiconductor

FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel Power Trench® MOSFET 60V, 60A, 14.6mΩ Features - r DS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A - Qg(tot) = 24n C (Typ.), VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Formerly developmental type 83557 Applications - Motor / Body Load Control - ABS Systems - Powertrain Management - Injection Systems - DC-DC converters and Off-line UPS - Distributed Power Architectures and VRMs - Primary Switch for 12V and 24V systems DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) GATE MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 25o C, VGS = 5V) Continuous (TA = 25o C, VGS = 5V, Rθ JA = 43o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 67 60 10 Figure 4 46 125 0.83 -55 to 175 A A A A m J W W/o C o Ratings 60 ±20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.2 62 43 o C/W o o C/W C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://.aecouncil./ Reliability data can be found at: http://.fairchildsemi./products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems...