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FDP14N30

N-Channel MOSFET

FDP14N30 Features

* 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V

* Low gate charge ( typical 18 nC)

* Low Crss ( typical 17 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability UniFET Description February 2007 TM These N-Channel enhancement mode power

FDP14N30 General Description

February 2007 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand.

FDP14N30 Datasheet (404.68 KB)

Preview of FDP14N30 PDF

Datasheet Details

Part number:

FDP14N30

Manufacturer:

Fairchild Semiconductor

File Size:

404.68 KB

Description:

N-channel mosfet.

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TAGS

FDP14N30 N-Channel MOSFET Fairchild Semiconductor

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