Datasheet Summary
FDP8870 e May 2008
N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
- DC/DC converters tmM
Features
- rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
- RoHS pliant
(FLANGE) DRAIN
SOURCE
DRAIN
GATE
TO-220AB FDP SERIES
MOSFET Maximum...
