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FDP8870 N-Channel MOSFET

FDP8870 Description

FDP8870 e May 2008 FDP8870 N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDP8870 Features

* rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability
* RoHS Compliant (FLANGE) DRAIN SOURCE DRAIN

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