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Fairchild Semiconductor Electronic Components Datasheet

FDP8870 Datasheet

N-Channel PowerTrench MOSFET 30V/ 156A/ 4.1m

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November 2004
FDP8870
N-Channel PowerTrench® MOSFET
30V, 156A, 4.1m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 4.1m, VGS = 10V, ID = 35A
• rDS(ON) = 4.6m, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
FDP8870
FDP8870
Device
FDP8870
FDP8870_NL (Note 4)
Package
TO-220AB
TO-220AB
Reel Size
Tube
Tube
D
S
Ratings
30
±20
156
147
19
Figure 4
300
160
1.07
-55 to 175
0.94
62
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
Tape Width
N/A
N/A
Quantity
50 units
50 units
©2004 Fairchild Semiconductor Corporation
FDP8870 Rev. A2


Fairchild Semiconductor Electronic Components Datasheet

FDP8870 Datasheet

N-Channel PowerTrench MOSFET 30V/ 156A/ 4.1m

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
ID = 35A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain MillerCharge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 35A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 35A
VGS = 4.5V, RGS = 3.3
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
Notes:
1: Package current limitation is 80A.
2: Starting TJ = 25°C, L = 0.15mH, IAS = 64A, VDD = 27V, VGS = 10V.
3: Pulse width = 100s.
4: FDP8870_NL is lead free product. FDP8870_NL marking will appear on the reel label.
Min Typ Max Units
30 - - V
- -1
µA
- - 250
- - ±100 nA
1.2 - 2.5
- 0.0034 0.0041
- 0.0040 0.0046
- 0.0051 0.0065
V
- 5200 -
pF
- 970 -
pF
- 570 -
pF
- 2.1 -
- 106 132 nC
- 56 69 nC
- 5.0 6.5 nC
- 15 - nC
- 10 - nC
- 23 - nC
- - 168 ns
- 11 - ns
- 105 -
ns
- 70 - ns
- 46 - ns
- - 173 ns
- - 1.25 V
- - 1.0 V
- - 37 ns
- - 21 nC
©2004 Fairchild Semiconductor Corporation
FDP8870 Rev. A2


Part Number FDP8870
Description N-Channel PowerTrench MOSFET 30V/ 156A/ 4.1m
Maker Fairchild Semiconductor
Total Page 10 Pages
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