• -3.0 A, -30 V. • • • • RDS(ON) = 0.052Ω @ VGS = -10V RDS(ON) = 0.086Ω @ VGS = -4.5V. Low gate charge. (8nC typical). High performance trench technology for extremely .

• Load switch • DC/DC converter • Motor driving D2 Small footprint (38% smaller than a standard SO-8);     low profile .

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

FDR8521L

FDR856P

FDR858P

FDR8305N

FDR8308P

FDR8321L

FDR836P

FDR838P

FDR840P

FDR842P

FDR844P

FDR4410

FDR4420A