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FDR858P - P-Channel MOSFET

Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

Features

  • -8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-8 package: small footprint (40%) less than SO-8); low profile (1mm thick); maximum power comperable to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D S D S 5 6 D G 4 3 2 1 7 8 SuperSOT -8 Mark: 858P TM D D Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted R.

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February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21nC typical).
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