-8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21nC typical). High performance trench technology for extremely low RDS(O.

load switching and power management, battery charging circuits, and DC/DC conversion. Features -8 A, -30 V. RDS(ON) = .

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semicond.

FDR8508P

FDR8521L

FDR856P

FDR8305N

FDR8308P

FDR8321L

FDR836P

FDR838P

FDR840P

FDR842P

FDR844P

FDR4410

FDR4420A