FDR858P Datasheet | Fairchild Semiconductor

February 1999 FDR858P Single P-Channel, Logic Level, Power Trench TM MOSFET General Description The Super SOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21n C typical). High performance trench technology for extremely low RDS(ON). Super SOTTM-8 package: small footprint (40%) less than SO-8); low profile (1mm thick); maximum power perable to SO-8. SOT-23 Super SOTTM-6 Super SOTTM -8 SO-8 SOT-223 SOIC-16 5 6 4 3 2 1 7 8 Super SOT -8 Mark:...