FDR856P mosfet equivalent, p-channel mosfet.
- 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum.
such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to .
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