FDS5672 Key Features
- rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
- rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
| Part Number | Description |
|---|---|
| FDS5670 | N-Channel MOSFET |
| FDS5680 | N-Channel MOSFET |
| FDS5682 | N-Channel Power Trench MOSFET |
| FDS5690 | N-Channel MOSFET |
| FDS5692Z | N-Channel UltraFET Trench MOSFET |