FDS5690 mosfet equivalent, n-channel mosfet.
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7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
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Low gate charge (23nC typical). Fast switching speed. High perfor.
where low in-line power loss and fast switching are required.
Features
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7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V .
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low vo.
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