FDS5680 Datasheet (ON Semiconductor)

FDS5680, N-Channel MOSFET

This N *Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on *state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in

FDS5680 Features

* S A,

* 60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V

* Low Gate Charge (30 nC typical)

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power and Current Handling Capability