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FDS5680 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 60 V FDS5680 General .
This N. Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on. state r.

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Features

* S A,
* 60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V
* Low Gate Charge (30 nC typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability

Applications

* where low in

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