* 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (3.

* DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Dra.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

FDS6670A

FDS6670AS

FDS6670S

FDS6673AZ

FDS6673BZ

FDS6673BZ-F085

FDS6673BZ_F085

FDS6675

FDS6675A

FDS6675BZ

FDS6676

FDS6676AS

FDS6676AS-G