FDS6680A mosfet equivalent, n-channel mosfet.
12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V.
Fast switching speed. Low gate charge. High performance trench technology for extremely lo.
where low in-line power loss and fast switching are required.
Features
12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RD.
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well s.
Image gallery
TAGS
Download (Size : 241.42KB)