FDS6681Z
Description
This P−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance.
Key Features
- RDS(ON) = 4.6 mΩ @ VGS = –10 V
- RDS(ON) = 6.5 mΩ @ VGS = –4.5 V
- Extended VGSS Range (–25 V) for Battery Applications
- HBM ESD Protection Level of 8 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Termination is Lead−free and RoHS pliant
- This is a Pb−Free and Halide Free Device
