FDS6681Z Description
This P−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS6681Z Key Features
- 20 A, -30 V
- RDS(ON) = 4.6 mΩ @ VGS = -10 V
- RDS(ON) = 6.5 mΩ @ VGS = -4.5 V
- Extended VGSS Range (-25 V) for Battery