FDS6681Z - 30V P-Channel MOSFET

onsemi

General Description

This P Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on

state resistance.

Key Features

20 A,.
30 V.
RDS(ON) = 4.6 mΩ @ VGS =.
10 V.
RDS(ON) = 6.5 mΩ @ VGS =.
4.5 V.
Extended VGSS Range (.
25 V) for Battery.

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FDS6681Z 30v p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS6681Z
Manufacturer	onsemi
File Size	243.90 KB
Description	30V P-Channel MOSFET
Datasheet	FDS6681Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) 30 V FDS6681Z General Description This P−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • –20 A, –30 V ♦ RDS(ON) = 4.6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6.5 mΩ @ VGS = –4.