FDS6812A mosfet equivalent, dual n-channel logic level pwm optimized powertrench mosfet.
* 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
* Low gate charge (12 nC typical)
* High performance trench technology for extreme.
where low in-line power loss and fast switching are required.
Features
* 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V.
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