FDS6812A Datasheet - Fairchild Semiconductor

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6812A Features

* 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V

* Low gate charge (12 nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pi

FDS6812A General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDS6812A Datasheet (79.94 KB)

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Datasheet Details

Part number:

FDS6812A

Manufacturer:

Fairchild Semiconductor

File Size:

79.94 KB

Description:

Dual n-channel logic level pwm optimized powertrench mosfet.

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FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET Fairchild Semiconductor

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FDS6812A Features

FDS6812A General Description

Datasheet Details

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