FDS6815
Description
These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process.
Key Features
- -5.5 A, 20 V
- RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery applications
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
