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FDS6875 Datasheet - Fairchild Semiconductor

Dual P-Channel MOSFET

FDS6875 Features

* -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2

FDS6875 General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable elect.

FDS6875 Datasheet (194.66 KB)

Preview of FDS6875 PDF

Datasheet Details

Part number:

FDS6875

Manufacturer:

Fairchild Semiconductor

File Size:

194.66 KB

Description:

Dual p-channel mosfet.

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FDS6875 Dual P-Channel MOSFET Fairchild Semiconductor

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