FDS6875 mosfet equivalent, dual p-channel mosfet.
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(.
load switching and power management, battery charging and protection circuits.
Features
-6 A, -20 V. RDS(ON) = 0.030 Ω.
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