* rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S
FDS6911
Fairchild Semiconductor
212.03 KB
Mosfet.
FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET December 2011 FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13mΩ General.
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