FDS6911 Key Features
- rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
| Part Number | Description |
|---|---|
| FDS6910 | MOSFET |
| FDS6912 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6912A | Dual N-Channel MOSFET |
| FDS6900AS | Dual N-Ch PowerTrench SyncFET |
| FDS6900S | Dual N-Ch PowerTrench SyncFet |