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FDS86106 - MOSFET

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FDS86106 Product details

Description

Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A. Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A. High performance trench technology for extremely low rDS(on). High power and current handling capability in a widely used surface mount package. 100% UIL Tested. RoHS Compliant This N-Channel MO.

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