FDS86106 Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A - Max r DS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A - High performance trench technology for extremely low r DS(on) - High power and current handling capability in a widely used surface mount package - 100% UIL Tested - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness. Applications - Synchronous Rectifier - Primary Switch For Bridge Topology SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25...